OXIDE FILM FORMATION METHOD, MOS DEVICE MANUFACTURING METHOD, MOS TRANSISTOR MANUFACTURING METHOD, SiOx POWDER AND SiOx POWDER PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To form a high-quality oxide film that can withstand use as a gate insulating film on a nitride semiconductor. SOLUTION: An oxide film formation method includes: a step of depositing a SiOx film on a nitride semiconductor member by vacuum evaporation using a SiOx powder as a raw material, and; a step of oxidizing the deposited SiOx film by heating the same in an oxidizing atmosphere under UV irradiation. The SiOx powder used as the raw material is characterized by: (1) an infrared absorption spectrum obtained by Fourier transform infrared spectroscopy (FTIR) showing a peak at 880 cm-1; (2) a Raman spectrum obtained by Raman spectroscopy showing no peak at 450-550 cm-1, and (3) an XPS spectrum obtained by X-ray photoelectron spectroscopy (XPS) showing a peak corresponding to Si-O bond in SiO2(about 103 eV) and a peak corresponding to Si-Si bond in Si 2p orbital (about 99 eV), provided that the size of the peak corresponding to Si-Si bond is 0.6 times that of the peak corresponding to Si-O bond. COPYRIGHT: (C)2009,JPO&INPIT