FORMATION OF A SLOT IN A SILICON SUBSTRATE

摘要

A slot (18) is formed that reaches through a first side (21) of a silicon substrate (12) to a second side of the silicon substrate (12). A trench (15) is laser patterned. The trench (15) has a mouth at the first side (21) of the silicon substrate (12). The trench (15) does not reach the second side of the silicon substrate (12). the trench (15) is dry etched until a depth of at least a portion of the trench (15) is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot (18). the wet etch etches silicon from all surfaces of the trench (15).