METHOD OF OPERATING A NON VOLATILE MEMORY DEVICE

摘要

An operating method of a non-volatile memory device is provided to invert and latch a state in a sensing node while data are programmed and verified in a memory cell of a flash memory device having a multi-level cell. A bit line(BLe) is pre-charged according to a programming degree of a selected memory cell by inputting a positive voltage through a common source line of cell strings of memory cells. Data are stored in a first latch of a page buffer according to a voltage level of a sensing node(SO) which is changed according to a voltage level of a bit line. The data stored in the first latch are transmitted to a second latch through the sensing node.