发明名称 |
METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE |
摘要 |
Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.
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申请公布号 |
US2009050964(A1) |
申请公布日期 |
2009.02.26 |
申请号 |
US20080255117 |
申请日期 |
2008.10.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
DOZEN YOSHITAKA;TAMURA TOMOKO;TSURUME TAKUYA;DAIRIKI KOJI |
分类号 |
H01L29/786;H01L21/304;H01L21/77;H01L21/84;H01L27/13;H01L27/28;H01R12/00 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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