| 摘要 |
A method for forming a contact hole is provided to implement a minute pattern by forming an incline angle of the contact hole vertically through the control of the etch process condition. A semiconductor substrate(100) is provided. A transistor is formed in the semiconductor substrate. A first insulating layer(106) is formed along a surface of the semiconductor substrate including the transistor. The first insulating layer is the nitride layer. A second insulating layer(110), an etch stopping layer(112) and a third insulating layer(114) are formed on the top of the first insulating layer. The third insulating layer and the etch stopping layer of the damascene pattern region are removed by using the first etching process. The second insulating layer and the first insulating layer of the damascene pattern region are removed by using the second etching process. The third insulating layer is patterned by a third etching process in order to form the dual damascene pattern.
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