METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a semiconductor device is provided to form a plurality of laser beams into the linear beams having the shape that is identical on the irradiated surface in order to easily mutually overlap a plurality of linear beams. A semiconductor film is formed on the top of the substrate(105). The semiconductor film is crystallized by irradiating the first laser beam onto the semiconductor film while the semiconductor film and the first laser beam are moved. The impurity element is added to the crystallized semiconductor film. The impurity element is activated by irradiating the second laser beam onto the semiconductor film while the semiconductor film and the second laser beam in which the impurity element is added are moved. The shapes of the first laser beam and the second laser beam are transformed by a convex lens(103).