| 摘要 |
In a semiconductor device according to the present invention, the power source voltage Vdd1 of a core transistor Tr1, the power source voltage Vdd2 of an I/O transistor Tr2, and the power source voltage Vdd3 of an I/O transistor Tr3 satisfy Vdd1<Vdd2<Vdd3. In a method for fabricating the semiconductor device, each of the respective gate insulating films of the I/O transistors Tr2 and Tr3 is formed in the same step to have the same thickness. Each of the respective SD extension regions of the core transistor Tr1 and the I/O transistor Tr2 is formed at the same dose.
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