METHOD FOR ELECTIVE SILICIDIFICATION OF THE SURFACE OF SILICON-BASED NANOWIRE AND SEMICONDUCTOR DEVICE USING THE NANOWIRE

摘要

A method for silicifying a surface of a silicon based nano wire selectively and a semiconductor device made by the same are provided to implement a high speed semiconductor device with a high integration and a low resistor by reducing a contact resistor when bonding a nano wire and a metal wire. One or more silicon nano wires(50) are arranged on a substrate(10). A mask pattern(90) is formed on an upper part of a silicon based nano wire. The mask pattern is made of the silicon oxide or the silicon nitride. A metal thin film(60) is stacked on the upper part of the mask pattern by a sputtering method or an atomic layer deposition method. A metal-silicide layer(70) is formed by a thermal process of a metallic thin film. The mask pattern is removed. The non-reactive metal surface is removed by using a wet etch process.