| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to form a uniform microcrystalline semiconductor film by generating the plasma by supplying a high frequency power without affect of a surface standing wave and the high frequency power of a VHF band. A gate electrode is formed on a substrate. The substrate has an insulating surface. An insulating layer is formed on the gate electrode. The substrate is introduced inside a vacuum chamber. The material gas is introduced inside the vacuum chamber. A lower part of a microcrystalline semiconductor film(53) is formed inside the vacuum chamber under a first deposition condition. The glow discharge plasma is generated by applying a first high frequency power and a second high frequency power to an electrode under the first deposition condition. The frequency of the first high frequency power has a wavelength more than 10m. The frequency of the second high frequency power has the wavelength less than 10m. The upper part of the microcrystalline semiconductor film is deposited under the second deposition condition. At least, one of a substrate temperature, the electricity, a frequency, a material gas flow rate and the degree of a vacuum in the second deposition condition is different from one of a substrate temperature, the electricity, a frequency, a material gas flow rate and the degree of a vacuum of the first deposition condition. A buffer layer(54) is formed on the microcrystalline semiconductor film.</p> |
