发明名称 |
LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS |
摘要 |
<p>A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.</p> |
申请公布号 |
KR20090018629(A) |
申请公布日期 |
2009.02.20 |
申请号 |
KR20087030213 |
申请日期 |
2007.03.12 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS INC. |
发明人 |
ROEDER JEFFREY F.;BAUM THOMAS H.;HENDRIX BRYAN C.;STAUF GREGORY T.;XU CHONGYING;HUNKS WILLIAM;CHEN TIANNIU;STENDER MATTHIAS |
分类号 |
H01L21/20;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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