| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which a heat radiation structure for a semiconductor chip can be manufactured through simple processes. SOLUTION: The manufacturing method of the semiconductor device includes a process of forming a multicomponent alloy layer 10 as a composition having a temperature range as a solid-liquid coexistence range on a reverse surface of a semiconductor wafer 1 having a plurality of semiconductor elements formed on a top surface, and a process of dividing the semiconductor wafer 1 and multicomponent alloy layer 10 into a plurality of semiconductor chips 1a, and further includes a process of heating the multicomponent alloy layer 10 to the temperature range as the solid-liquid coexistence range and then cooling it after the process of forming the multicomponent alloy layer 10. Consequently, unevenness due to solidifying segregation is formed on the top surface of the multicomponent alloy layer 10. COPYRIGHT: (C)2009,JPO&INPIT |
