发明名称 A METHOD OF DRIVING A SEMICONDUCTOR MEMORY DEVICE AND A SEMICONDUCTOR MEMORY DEVICE
摘要 This disclosure concerns a driving method of a memory having cells of floating body type which comprises executing, during a write operation, a first cycle of applying a first potential to the bit lines corresponding to the first selected cells and of applying a second potential to the selected word line to write first data; executing, during the write operation, a second cycle of applying a third potential to the bit lines corresponding to a second selected cell among the first selected memory cells and of applying a fourth potential to the selected word line to write second data, wherein the second potential is a potential biased to a reversed side against the polarity of the carriers with reference to potentials of the source and the first potential, and the fourth potential is a potential biased to same polarity as the polarity of the carriers with reference to the potentials of the source and the third potential.
申请公布号 WO2009005075(A3) 申请公布日期 2009.02.19
申请号 WO2008JP61940 申请日期 2008.06.25
申请人 KABUSHIKI KAISHA TOSHIBA;SHINO, TOMOAKI 发明人 SHINO, TOMOAKI
分类号 G11C11/404 主分类号 G11C11/404
代理机构 代理人
主权项
地址