| 摘要 |
A semiconductor memory device having an internal voltage generating circuit and an operating method thereof, are provided to generate a high voltage necessary for a semiconductor by boosting a supplied voltage. A semiconductor memory device includes a boosting decision circuit, a decoding unit(420), a delay unit(440), a high voltage sensing unit(460), and an active boosting signal generation unit(480). The decoding unit indicates states of a plurality of banks corresponding to an active signal(RASB) and a precharge signal(PCGB). The decoding unit outputs bank information. The delay unit outputs a bank enable signal by delaying a falling edge of a bank information signal(RAST(0:N-1)). The high voltage sensing unit activates a boosting decision signal(VPP DET) when the level of the high voltage is equal to or less than a constant standard. The boosting signal generation unit activates a boosting enable signal according to a bank enable signal(BANKEN(0:N-1)) and the boosting decision signal.
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