发明名称 SILICON ELECTRODE PLATE PROVIDING UNIFORM ETCHING
摘要 PROBLEM TO BE SOLVED: To provide a silicon electrode plate achieving uniform plasma etching even when the etching is carried out for a long time. SOLUTION: The silicon electrode plate is constituted by boring gas jet holes 5 in a silicon electrode plate 2, and each of the gas jet holes 5 has a bottomed large-diameter hole portion 8 whose depth is less than the thickness of the silicon electrode plate 2 and which has an axis along the thickness of the silicon electrode plate and a plurality of through thin holes 9 penetrating the silicon electrode plate along the thickness of the silicon electrode plate 2 in nonparallel directions from a bottom portion of the bottomed large-diameter hole portion 8 to one surface of the silicon electrode plate 2. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009038209(A) 申请公布日期 2009.02.19
申请号 JP20070200964 申请日期 2007.08.01
申请人 MITSUBISHI MATERIALS CORP 发明人 YONEHISA TAKASHI;FUJITA SATOSHI
分类号 H01L21/3065;C30B29/06;C30B33/00 主分类号 H01L21/3065
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