发明名称 |
SILICON ELECTRODE PLATE PROVIDING UNIFORM ETCHING |
摘要 |
PROBLEM TO BE SOLVED: To provide a silicon electrode plate achieving uniform plasma etching even when the etching is carried out for a long time. SOLUTION: The silicon electrode plate is constituted by boring gas jet holes 5 in a silicon electrode plate 2, and each of the gas jet holes 5 has a bottomed large-diameter hole portion 8 whose depth is less than the thickness of the silicon electrode plate 2 and which has an axis along the thickness of the silicon electrode plate and a plurality of through thin holes 9 penetrating the silicon electrode plate along the thickness of the silicon electrode plate 2 in nonparallel directions from a bottom portion of the bottomed large-diameter hole portion 8 to one surface of the silicon electrode plate 2. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009038209(A) |
申请公布日期 |
2009.02.19 |
申请号 |
JP20070200964 |
申请日期 |
2007.08.01 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
YONEHISA TAKASHI;FUJITA SATOSHI |
分类号 |
H01L21/3065;C30B29/06;C30B33/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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