发明名称 Nanotube Devices and Vertical Field Effect Transistors
摘要 A method of depositing nanotubes in a region defined by an aperture is disclosed. The method provides advantageous control over the number of nanotubes to be deposited, as well as the pattern and spacing of nanotubes. Electrophoretic deposition, along with proper configuration of the aperture, allows at least one nanotube to be deposited in a target region with nanometer scale precision. Pre-sorting of nanotubes, e.g., according to their geometries or other properties, may be used in conjunction with embodiments of the invention to facilitate fabrication of devices with specific performance requirements. The method is useful for many applications where it is desirable to deposit more than one nanotube in a defined region. For example, vertical field effect transistor (VFET) designs may benefit from having more than one nanotube forming a channel to allow more current to flow through the device. By controlling the number of nanotubes to be deposited, one can ensure that the VFET output can be designed with sufficient current to meet the parameters of a logic circuit input.
申请公布号 US2009045061(A1) 申请公布日期 2009.02.19
申请号 US20080143132 申请日期 2008.06.20
申请人 NEW JERSEY INSTITUTE OF TECHNOLOGY 发明人 FARROW REGINALD C.;IQBAL ZAFAR;GOYAL AMIT;LIU SHENG
分类号 C25D13/02 主分类号 C25D13/02
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