DIRECT BANDGAP SUBSTRATE WITH SILICON THIN FILM CIRCUITRY

摘要

This document discusses, among other things, a process for combining compound semiconductor or other direct band gap substrates with thin film circuitry, which can have an indirect band gap. In one example, an active matrix LED array that exhibits high luminous capabilities can be realized with the describe processes. In another example, a highly efficient optical detector is achievable through the combination described. The described structure can greatly enhance any application that uses functional substrates and can benefit from a high quality circuit layer, including but not limited to display technologies, light detection, MEMS, chemical sensors, and piezoelectric systems.