| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable trench gate MOSFET (T-MOS) having no variation in characteristics by etching a layer embedding an impurity semiconductor for a uniform three-dimensional structure to eliminate multiplex level difference stably and stabilizing the end point waveform. SOLUTION: When dopants are introduced into a semiconductor layer 702 used for embedding, the dopants are introduced to the entire surface of a region having an underlying three-dimensional structure 700 and a region 703 which is not etched later. At the same time, a region 706 having a flat underlying layer and being etched layer is patterned such that the dopants become uniform and have a concentration equal to that of the region having the three-dimensional structure 700 when annealing is performed. COPYRIGHT: (C)2009,JPO&INPIT
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