| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fine structure formation method, using isotropic etching, by which controllability of etching in fine processing is improved, and even a large-sized substrate can be uniformly processed as a result. <P>SOLUTION: The fine structure formation method is provided in which a body to be etched on the surface of which a mask having prescribed openings is disposed, is etched through the openings by using etching liquid and thereby recesses is formed on the surface of the body to be etched, wherein insoluble matter is generated by the reaction of the material contained in the body to be etched with the etching liquid, and then etching is stopped by the insoluble matter accumulated on the exposed surface of the body to be etched. <P>COPYRIGHT: (C)2009,JPO&INPIT |
