| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing light emitting devices having highly reliable thin film transistors with excellent electric characteristics, with high mass productivity. SOLUTION: In a light emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions. COPYRIGHT: (C)2009,JPO&INPIT |
