FLASH MEMORY DEVICE HAVING A DUMMY CELL AND ERASE METHOD THEREOF

摘要

A flash memory device having a dummy cell and an erasing method thereof are provided to minimize read errors by resetting threshold voltages of dummy cells in an optimum level without erase voltage stress. A plurality of memory cells(MC~MC) are formed on a pocket P-well and are serially connected with each other. A plurality of dummy cells(DMC,DMC) are serially connected to the memory cells. A plurality of selection transistors(GST,SST) are serially connected to the dummy cells. A voltage supply unit applies an erase voltage to the pocket P-well. The voltage supply unit applies a first voltage to a word line(WL~WL) of each of memory cells. The voltage supply unit supplies a second voltage higher than the first voltage to dummy lines(DWL,DWL) connected to gates of dummy cells.