| 摘要 |
<p>An electronic device having an element body (1), wherein dielectric layers (2) and internal electrode layers (3) are alternately stacked, wherein a hetero phase is formed in the dielectric layers and/or the internal electrode layers; and the hetero phase includes a Mg element and a Mn element. Preferably, the hetero phase is formed at least at a part near boundaries of the dielectric layers (2) and the internal electrode layers (3).</p> |
