发明名称
摘要 PROBLEM TO BE SOLVED: To provide a large-sized ITO sputtering target by which a stable high-quality film is formed over a large area. SOLUTION: A granular powder consisting of the mixed powder of In2O3 and SnO2 and having >=15 m2/g specific surface is preferably formed into a primary molding by a uniaxial die press, waterproof-packed and isostatically pressed by a cold isostatic press to uniformize the molding density. The obtained secondary molding having >=45% relative density is placed into a sintering electric furnace, in which a heater parallel to the plane of the secondary molding is arranged above and below, and sintered at about 1500 deg.C for about 10 hr to obtain the sintered molding. The sintered molding thus obtained, having >=90% average relative density and with the variation within ±2% of the average value is joined to a backing plate to form a large-sized target of >=800 cm2, hence an abnormal discharge or nodules are never generated in sputtering, and a good film is formed.
申请公布号 JP4227227(B2) 申请公布日期 2009.02.18
申请号 JP19980310749 申请日期 1998.10.30
申请人 发明人
分类号 C04B35/457;C23C14/34;C01G19/00;H01B13/00 主分类号 C04B35/457
代理机构 代理人
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