| 摘要 |
<p>A method of manufacturing a fine pattern of a semiconductor device is provided to reduce CD(Critical Dimension) deviation between lines due to misalignment between first exposure and second exposure by performing an exposure process for once. An amorphous carbon layer(22) and a primary nitride film(23) are formed on an etch target layer(21). A carbon-rich polymer layer(24) is formed on the primary nitride film. A silicon-rich polymer layer(25) is formed on the carbon-rich polymer layer. A anti-reflective layer(26) is formed on the silicon-rich polymer layer. A photosensitive pattern(27) is formed on the anti-reflective layer. An anti-reflective layer and a silicon-rich polymer layer are etched by using the photosensitive pattern as an etch barrier. The carbon-rich polymer layer is etched and a carbon-rich polymer pattern is molded. The second nitride film is formed on the overall structure including the carbon-rich polymer pattern. The second nitride film is etched with blanket etch back. The carbon-rich polymer pattern is removed using the dry or wet etching. The primary nitride film and the amorphous carbon layer are etched by using a second nitride pattern as an etch barrier. The second nitride pattern and the primary nitride film pattern are removed. A pattern is molded by etching an etch target layer.</p> |
