NICKEL SILICIDE PRODUCING METHOD

摘要

A method for producing nickel silicide is provided to reduce contact resistance at a low or high temperature by performing a rapid thermal process after depositing ruthenium and nickel on a signal crystal silicon wafer or a poly crystal silicon thin film with predetermined thickness successively. A ruthenium layer(20) is formed on a substrate(10). A nickel layer(30) is formed on the ruthenium layer. The nickel silicide(40) is formed by thermally processing the ruthenium layer and the nickel layer. The substrate is one of single crystal silicon substrate or the silicon polycrystalline substrate. The ruthenium layer and the nickel layer are formed by using the physical vapor deposition or the chemical vapor deposition.