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发明名称
直通矽通孔填充技术中之铜奈米粒子的共淀积
摘要
一种电解的铜电镀组成物及用于将半导体积体电路基板中通孔特征金属化的方法。该组成物包含铜离子源及经涂覆之铜奈米粒子,而该经涂覆之铜奈米粒子包含铜奈米粒子及双官能性分子涂层。
申请公布号
TW200907113
申请公布日期
2009.02.16
申请号
TW097123101
申请日期
2008.06.20
申请人
安颂股份有限公司
发明人
张芸;汤玛士 理查森;王晨
分类号
C25D15/02(2006.01);H01L21/768(2006.01)
主分类号
C25D15/02(2006.01)
代理机构
代理人
林志刚
主权项
地址
美国
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