| 摘要 |
A method of depositing silicon oxidation film is provided to realize high deposition rate in wide temperature range by using a silicon precursor including the diaminosilane. In a method of depositing silicon oxidation film, a silicon precursor which is gas state is supplied on a substrate(110). A silicon precursor comprises a diaminosilane, and the silicon precursor is purged from substrate(120). While the silicon precursor is supplied, the supplying gas is performed after the purge step before a next step. A ozone gas is supplied for the supplying gas(130).
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