| 摘要 |
<P>PROBLEM TO BE SOLVED: To make a film to be annealed, which allows short-wavelength light having intensity that is likely to damage a substrate to transmit therethrough, into a good-quality inorganic film by annealing the film to be annealed without damaging a resin substrate, in a method for manufacturing a thin-film element provided with the inorganic film obtained by emitting short-wavelength light to the film to be annealed that is formed on the resin substrate and made of a non-single crystal film. <P>SOLUTION: A thin-film element 1 is manufactured by executing the following steps: a step (A) for preparing a substrate 10 mainly composed of a resin material; a step (B) for forming a thermal buffer layer 50 on the substrate 10; a step (C) for forming a light-cutting layer 20 on the thermal buffer layer 50, wherein the light-cutting layer 20 prevents the substrate 10 from being damaged by short-wavelength light L while reducing an arrival rate of the short-wavelength light L at the substrate 10; a step (D) for forming a film 30a to be annealed, which allows the short-wavelength light L having intensity that is likely to damage the substrate 10 to transmit therethrough and is made of a non-single crystal film, on the light-cutting layer 20; and a step (E) for forming an inorganic film 30 by annealing the film 30a to be annealed while emitting the short-wavelength light L to the film 30a to be annealed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
