发明名称 |
FINFET MEMORY CELL HAVING A FLOATING GATE AND METHOD THEREFOR |
摘要 |
A fin field effect transistor (FinFET) memory cell and method of formation has a substrate for providing mechanical support. A first dielectric layer overlies the substrate. A fin structure overlies the dielectric layer and has a first current electrode and a second current electrode separated by a channel. A floating gate has a vertical portion that is adjacent to and electrically insulated from a side of the channel and has a horizontal portion overlying the first dielectric layer and extending laterally away from the channel. The floating gate stores electrical charge. A second dielectric layer is adjacent the floating gate. A control gate adjacent the second dielectric layer and physically separated from the floating gate by the second dielectric layer. The "L-shape" of the floating gate enhances capacitive coupling ratio between the control gate and the floating gate.
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申请公布号 |
US2009039420(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20070835548 |
申请日期 |
2007.08.08 |
申请人 |
TRIVEDI VISHAL P;MATHEW LEO |
发明人 |
TRIVEDI VISHAL P.;MATHEW LEO |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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