发明名称 VAPOR DEPOSITION METHODS FOR FORMING A METAL- CONTAINING LAYER ON A SUBSTRATE
摘要 Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
申请公布号 WO2008100691(A3) 申请公布日期 2009.02.12
申请号 WO2008US52035 申请日期 2008.01.25
申请人 MICRON TECHNOLOGY, INC.;SRINIVASAN, BHASKAR;SMYTHE, JOHN 发明人 SRINIVASAN, BHASKAR;SMYTHE, JOHN
分类号 C23C16/40;C23C16/455;H01L21/316 主分类号 C23C16/40
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