发明名称 |
VAPOR DEPOSITION METHODS FOR FORMING A METAL- CONTAINING LAYER ON A SUBSTRATE |
摘要 |
Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant. |
申请公布号 |
WO2008100691(A3) |
申请公布日期 |
2009.02.12 |
申请号 |
WO2008US52035 |
申请日期 |
2008.01.25 |
申请人 |
MICRON TECHNOLOGY, INC.;SRINIVASAN, BHASKAR;SMYTHE, JOHN |
发明人 |
SRINIVASAN, BHASKAR;SMYTHE, JOHN |
分类号 |
C23C16/40;C23C16/455;H01L21/316 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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