| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor-phase growth method capable of suppressing silicon transcription to backside of a wafer when vapor-phase growth of a thin film is carried out on the wafer in a barrel type vapor-phase growth apparatus, and capable of producing an epitaxial wafer having a high quality and a high yield. SOLUTION: A vapor-phase growth method carrying out vapor-phase growth of a thin film on a wafer surface includes housing a wafer in a counterbore part of a vapor-phase growth apparatus in which a plurality of plate-like susceptors are provided in a pyramid trapezoidal shape in a reaction chamber and each susceptor is made of graphite with an Si film formed on the surface thereof, and in which the circular counterbore part housing the wafer is formed on an outer surface of the susceptor, heating the wafer from the outer surface side, carrying out vapor-phase growth of the thin film on the wafer surface, and cooling the wafer at a cooling rate of 100°C per minute or less at least from a vapor-phase growth temperature to a predetermined temperature. COPYRIGHT: (C)2009,JPO&INPIT
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