| 摘要 |
PROBLEM TO BE SOLVED: To provide a nanoparticle phosphor obtained by using a nitride semiconductor material and excellent in light emission characteristics, to provide its manufacturing method which enables the production of the same at a high yield, and to provide the light-emitting device using the same. SOLUTION: This phosphor is a phosphor consisting of columnar crystals having a diameter of 3 nm or less, wherein a light emitting region and a light absorbing region are specified in the columnar crystal, and the light emitting region and the light absorbing region are adjacent to a longitudinal direction of the columnar crystal, the light emitting region is placed between two light absorbing regions in the longitudinal direction of the phosphor, the light emitting wavelength presented by the light emitting region is longer than 430 nm, the wavelength of excited light of the phosphor is 200-450 nm, and the light absorbing region is formed of at least one of Al<SB>x</SB>Ga<SB>1-x</SB>N (0≤x≤1) and In<SB>y</SB>Ga<SB>1-y</SB>N (0≤y≤0.15). COPYRIGHT: (C)2009,JPO&INPIT
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