| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an LED light-emitting element which is improved in operation speed without reducing light output. <P>SOLUTION: The active layer 18 made of GaInP having a lattice constant greater than the lattice constant of a GaAs substrate 12 is formed on the GaAs substrate 12 by crystal growth to cause compressive strain of 0.4 to 0.6%. Because of this, the LED light-emitting element can be improved in processing speed even if, unlike a conventional LED light-emitting element, the active layer is not doped. The LED light-emitting element, therefore, become capable of high-speed operation without reducing light output. <P>COPYRIGHT: (C)2009,JPO&INPIT |
