| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a bonded wafer by an ion implanting separation method wherein damage caused by ion implantation can be eliminated and the occurrence of concave defects can be suppressed on the surface of a bonded wafer after separation without spoiling surface roughness. SOLUTION: A bonding wafer provided with a micro air bubble layer formed by implanting gas ions is bonded to a base wafer as a supporting substrate, and the bonding wafer is peeled off at the micro air bubble layer as a boundary, and then an ion implanting separation method is used to form a thin film on the base wafer, so as to manufacture a bonded wafer. In such the manufacturing method, the bonded wafer after the bonding wafer is peeled off is subjected to RTA treatment in a hydrogen-containing atmosphere after cleaned with ozone water. The bonded wafer is heated in an oxidation gas atmosphere to form a thermal oxide film on the surface layer of the bonded wafer, the thermal oxide film is removed, and then the bonded wafer is heated in a non-oxidation gas atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
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