| 摘要 |
A method of manufacturing the semiconductor device is provided to prevent the generation of erosion by performing the etching process using a guide ring as a mask and performing the metal material formation process. The first region, the second region and the edge region are formed in the wafer. The photoresist pattern is formed on the wafer having the first and the second region. The contact hole is formed on the wafer by etching using the guide ring(R) as a mask. The metal material is formed on the wafer including the contact hole. The contact is formed by performing the planarization process on the wafer. In the etching process for forming the contact hole, the guide ring is positioned in the edge region. The first and the second region except for the edge region are only etched.
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