| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory element featuring high speed operation, stable reversible rewritable characteristics, and good retention property of a resistance value with high compatibility to semiconductor manufacturing processes, and a method of manufacturing the same, a nonvolatile memory device provided with the nonvolatile memory element and a nonvolatile semiconductor device. <P>SOLUTION: The nonvolatile memory element includes a first electrode 103, a second electrode 105, and a resistance varying layer 104 interposed between the first electrode 103 and the second electrode 105 for reversibly varying the resistance value based on an electrical signal given between both electrodes 103 and 105. The resistance varying layer 104 contains at least tantalum oxide. The resistance varying layer 104 comprises a tantalum oxide represented by a formula TaO<SB>x</SB>wherein 0<x<2.5. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
