| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a vertical silicon carbide semiconductor device which can obtain a large maximum current capacity even when using an SiC substrate and can suppress variations in the maximum current capacity of a finished product even when the number of defects within the SiC substrate varies in the finished product. SOLUTION: The method includes steps of forming a plurality of transistors and forming an interlayer dielectric 8 on the upper surface of a semiconductor substrate, forming a plurality of openings 9 in the interlayer dielectric 8 to expose one electrode regions 3, 4 of each transistor from the bottoms of the openings 9, forming a transparent electrode 22 for connecting one electrode regions 3, 4 and forming a drain electrode 10 on the lower surface of the semiconductor substrate, detecting light emission caused by a defect 21 present in the interior of the semiconductor substrate by applying a predetermined voltage between the electrodes 10, 22, and directly forming an insulator 25a on one electrode regions 3a, 4a of the transistor corresponding to the light emission position. COPYRIGHT: (C)2009,JPO&INPIT
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