| 摘要 |
A semiconductor device including a nonvolatile memory and the fabrication method of the semiconductor device is described. There is provided a semiconductor device, including a semiconductor substrate, a nonvolatile memory cell including a first MOS transistor having a first gate formed on the semiconductor substrate, and source-drain regions formed in the semiconductor substrate to interpose a surface region of the semiconductor substrate beneath the first gate, the first gate being a layered gate structure having a tunnel gate insulating film, a first gate electrode film, an inter-gate insulating film and a second gate electrode film, and a logic circuit including a second MOS transistor having a second gate formed on the semiconductor substrate, and the source-drain regions formed in the semiconductor substrate to interpose a surface region of the semiconductor substrate beneath the second gate, the second gate being a gate structure having a gate insulating film, the first gate electrode film and the second gate electrode film.
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