发明名称 SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that can perform invalidation processing when powered on in invalidation processing for a valid bit. <P>SOLUTION: The semiconductor memory device includes an initialization memory cell having a first inverter circuit including a first transistor and a second transistor, and a second inverter circuit whose input portion is connected to an output portion of the first inverter circuit and output portion is connected to an input portion of the first inverter circuit, and including a third transistor and a fourth transistor. An absolute value of a threshold voltage of the third transistor is smaller than that of the first transistor. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009032387(A) 申请公布日期 2009.02.12
申请号 JP20080166733 申请日期 2008.06.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUJITA MASAFUMI
分类号 G11C11/41;G11C11/412;H01L21/8244;H01L27/11 主分类号 G11C11/41
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