| 摘要 |
PROBLEM TO BE SOLVED: To produce a single crystal SiC epitaxial film which is less in micropipe defects and high in reproducibility and uniformity of film thickness. SOLUTION: In the method for producing the single crystal SiC epitaxial film, by which a single crystal SiC substrate 11 and a carbon raw material supply plate 24 are arranged facing each other through a spacer 23 and a heat treatment is performed in such a state that a metallic Si melt layer 27 is interposed in a space formed between the single crystal SiC substrate 11 and the carbon raw material supply plate 24 to epitaxially grow SiC on the single crystal SiC substrate 11, a spacer, formed by applying a photoresist on the surface of a carbon raw material supply plate 24 and curing the photoresist, is used as the spacer 23. COPYRIGHT: (C)2009,JPO&INPIT
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