发明名称 METHOD OF ETCHING A SILICON-BASED MATERIAL
摘要 A method is described of selectively etching a silicon substrate in small local areas in order to form columns or pillars in the etched surface. The silicon substrate is held in an etching solution of hydrogen fluoride, a silver salt and an alcohol. The inclusion of the alcohol provides a greater packing density of the silicon columns.
申请公布号 IL192969(D0) 申请公布日期 2009.02.11
申请号 IL20080192969 申请日期 2008.07.22
申请人 NEXEON LTD.;GREEN, MINO;LIU, FENGMING 发明人
分类号 H01L;H01M10/36 主分类号 H01L
代理机构 代理人
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