发明名称 |
METHOD OF ETCHING A SILICON-BASED MATERIAL |
摘要 |
A method is described of selectively etching a silicon substrate in small local areas in order to form columns or pillars in the etched surface. The silicon substrate is held in an etching solution of hydrogen fluoride, a silver salt and an alcohol. The inclusion of the alcohol provides a greater packing density of the silicon columns. |
申请公布号 |
IL192969(D0) |
申请公布日期 |
2009.02.11 |
申请号 |
IL20080192969 |
申请日期 |
2008.07.22 |
申请人 |
NEXEON LTD.;GREEN, MINO;LIU, FENGMING |
发明人 |
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分类号 |
H01L;H01M10/36 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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