| 摘要 |
<p>A manufacturing method and magnetic memory of the magnetic memory are provided to reduce the deviation of the entry current of the tunneling magnetoresistive element and to achieve the reliability and the high miniaturization. After the lower wiring layer(20) is formed, the interlayer dielectric layer(155) is formed on the lower wiring layer. The opening is formed on the interlayer dielectric layer and exposes the lower wiring layer. The barrier metal layer is formed in order to cover the inner surface of opening and interlayer dielectric layer. The metal layer is formed on the barrier metal layer and fills the opening. The barrier metal layer is used as a stopper. The metal layer on the barrier metal layer is removed by grinding. The miring layer including the metal layer and the barrier metal layer is formed. The tunneling magnetoresistive element(50) is manufactured on the wiring layer.</p> |
