| 摘要 |
An electroluminescent (EL) device comprising substrate 1, first electrode layer 2, wiring (21, fig. 5b), insulating layer 3 formed to cover the edge portion of electrode layer 2 and the non-light emitting portion of the device, EL light emitting layer 4 patterned by photolithography on electrode layer 2 and second electrode layer 5. Insulating layer 3 is not damaged during dry reactive ion etching unlike insulating layers shown in figures 5B and 5C since the layer is formed from an organopolysiloxane comprising a hydrolysis condensation or cocondensation product of one or more kinds of silicon compound e.g. methyl trimethoxy silane. An EL device comprising an insulating layer 3 formed with an inorganic material (e.g. an oxide or nitride of silicon) having an etching selectivity of 2.5 or more to an organic compound in the dry etching process is also disclosed. |
