发明名称 |
Method for fabricating flash memory device |
摘要 |
A method for fabricating a flash memory device is disclosed that improves hot carrier injection efficiency by forming a gate after forming source and drain implants using a sacrificial insulating layer pattern, which includes forming a sacrificial insulating pattern layer over a flash memory channel region of a semiconductor substrate; forming source and drain regions in the semiconductor substrate by ion implantation using the sacrificial insulating pattern layer as a mask; removing portions of the sacrificial insulating pattern layer; sequentially forming an ONO-type dielectric layer and a gate material layer; selectively etching the gate material layer and at least part of the gate dielectric layer to form a gate; and forming gate sidewall spacers at sides of the gate.
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申请公布号 |
US7488634(B2) |
申请公布日期 |
2009.02.10 |
申请号 |
US20050121465 |
申请日期 |
2005.05.03 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
SHIN EUN JONG |
分类号 |
H01L21/336;H01L27/115;H01L21/265;H01L21/28;H01L29/51;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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