| 摘要 |
PURPOSE:To enable highly reliable isolation of a dielectric through a simplified process by employing a substrate-junction constitution formed of a close junction of two semiconductor crystal substrates, one of which has a surface coated with an insulating film. CONSTITUTION:A junction of a single crystal substrate 11 and an N-type single crystal substrate 12 having a surface provided with an insulating film 13 is made by closely contacting substrates with a heat treatment at a temp. equal to or higher than 200 deg.C. The opposite surfaces of these substrates 11, 12 are mirror-polished. A groove reaching the film 13 is then formed in the substrate 12. An oxide film is then formed so that the groove is embedded by an insulating film 14, the oxide film of a part of the substrate 12 is removed. Next, an N-type epitaxial film 15 is formed. A P-layer is then formed on the film 15. An isolation region 17 is then formed to the depth reaching the substrate 12 by etching. Furthermore, an oxide film 18 is formed on the whole surface, and the opening of contact holes is made. With this manufacturing method, highly reliable isolation of a dielectric can be achieved without using steps such as depositing on removing a support layer. |
