| 摘要 |
A semiconductor package (400) includes a thin rectangular structure having a top and bottom metallic side surfaces such that end surfaces of structure is perpendicular to side surfaces. A MOS gated device has terminals (401-403) extending from one end surface of package and is located within package interior. Insulation housing encloses a portion of package outer surface separating terminals from top and bottom metallic side surfaces. A common support is connected to metallic side surfaces of packages in parallel and exposed for heat transfer to coolant chamber. |
