SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor light emitting device and a manufacturing method thereof are provided to reduce an input voltage and to increase efficiency of a light emitting device by improving forward voltage property and turn on voltage property. A N-type GaN semiconductor layer(110) is formed on a substrate(100). An active layer(120) is formed on a Ga surface of the N-type GaN semiconductor layer. A p-type semiconductor layer(130) is formed on the active layer. The substrate is removed. A N-type electrode(150) is formed on an N surface of the N-type GaN semiconductor layer, includes lanthanum - nickel alloy, and includes LaNi5.