| 摘要 |
<p>A method for fabricating of nonvolatile memory device is provided to realize minute wire of the semiconductor device by forming thickness of a photoresist layer thinner on the substrate including a floating gate. In a method for fabricating of nonvolatile memory device, an element isolation film(109) is formed on the semiconductor substrate(100) and is divided into a cell region and a logic area. A laminated oxide film(112a), a floating gate(114a), a dielectric film(116) and a control gate(119) are formed on the cell region of the semiconductor substrate. The photoresist layer(200) is formed so that the element isolation film on the cell region is exposed to the outside. After the element isolation film is removed through an etching process, an implant processing is performed and the common source area is formed on the element isolation film. The oxide film and the laminated logic gate of the structure are formed on the logic area.</p> |
