发明名称 |
HIGH PERFORMANCE POWER MOS STRUCTURE |
摘要 |
A semiconductor device includes a source region and a drain region disposed in a substrate wherein the source and drain regions have a first type of dopant; a gate electrode formed on the substrate interposed laterally between the source and drain regions; a gate spacer disposed on the substrate and laterally between the source region and the gate electrode, adjacent a side of the gate electrode; and a conductive feature embedded in the gate spacer.
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申请公布号 |
US2009032868(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20070831689 |
申请日期 |
2007.07.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN YU WEN;CHEN FU-HSIN;HUANG TSUNG-YI;TSAI YT |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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