SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

In a semiconductor device having a memory transistor, a high-voltage operation transistor, and a low-voltage operation transistor on the same substrate, the memory transistor has a first gate sidewall insulation film (10M) and a second gate sidewall insulation film (20M) located outside the first gate sidewall insulation film. The high-voltage operation transistor has a third gate sidewall insulation film (10H) having the same composition as the first gate sidewall insulation film and a fourth gate sidewall insulation film (20H) located outside the third gate sidewall insulation film and having the same composition as the second gate sidewall insulation film. The low-voltage operation transistor has a fifth gate sidewall insulation film (20L) having the same composition as the second and fourth gate sidewall insulation films. The total width of the sidewall spacer of the low-voltage operation transistor is narrower than the total width of the sidewall spacer of the high-voltage operation transistor by the film thickness portion of the third gate sidewall insulation film (10H).