| 发明名称 |
NITRIDING METHOD OF GATE OXIDE FILM |
| 摘要 |
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.
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| 申请公布号 |
US2009035950(A1) |
申请公布日期 |
2009.02.05 |
| 申请号 |
US20080202095 |
申请日期 |
2008.08.29 |
| 申请人 |
|
发明人 |
MATSUYAMA SEIJII;SUGAWARA TAKUYA;OZAKI SHIGENORI;NAKANISHI TOSHIO;SASAKI MASARU |
| 分类号 |
H01L21/314;C23C16/00;H01L21/316;H01L21/3205;H01L21/425;H01L21/4763 |
主分类号 |
H01L21/314 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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